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  mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (1/21) sep. -2010 description mgfs38e2325 is a gaas rf amplifier designed for wimax cpe. features ? ingap hbt device ? 5v operation ? 28.5dbm linear output power (64qam, evm=2.5%) ? 36db linear gain ? integrated output power detector ? integrated 1-bit step attenuator ? surface mount package ? rohs compliant package applications ieee802.16-2004 ieee802.16e-2005 functional block diagram mitsubishi electric corporation puts the ma ximum effort into making semiconductor pr oducts better and more reliable, but there is always the possibility that trouble may occur with them. trouble with se miconductors may lead to personal injury, fire or property dam age. remember to give due consideration to safety when making your ci rcuit designs, with appropriate meas ures such as (i)placement o f substitutive, auxiliary, circuits , (ii)use of non-flammable material or (iii) prevention against any ma lfunction or mishap. outline drawing dim in mm x-ray top view 1pin 2vc1, vcb 3vc2 4vc3 5vc4 6pout 7vdet 8gnd 9vref 10 vcont 1.0 1.0 4.0 4.0 4.0 4.0 1 2 3 4 5 10 9 8 7 6 gnd outline drawing dim in mm x-ray top view 1pin 2vc1, vcb 3vc2 4vc3 5vc4 6pout 7vdet 8gnd 9vref 10 vcont 1.0 1.0 4.0 4.0 4.0 4.0 1 2 3 4 5 10 9 8 7 6 gnd pin vc1,vcb (5v) vcont (0v/3.3v) vref(2.85v) pout gain control vc2(5v) vc3(5v) vc4(5v) bias circuit power detector vdet detector circuit
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (2/21) sep. -2010 absolute maximum ratings va l u e symbol parameter conditions min. max. unit vc1,vc2,vc3, vc4 , vcb collector supply voltage - - 8 v vref reference voltage - - 3 v vcont att control voltage - - 3.5 v ic1+icb 100 ma ic2 100 ma ic3 300 ma ic4 operation current - 1000 ma pin input power - - 3 dbm tc(op) operation temperature pou t ? ? c tstg storage temperature - -40 +125 ? c - duty cycle - - 50 % *note : ta=25 ? c unless otherwise noted, zin=zout=50 ? each maximum rating is guaranteed independently. please take care that mgfs38e2325 is oper ated under these conditions at the worst case on your terminal. electrical characteristics va l u e symbol parameter test conditions min typ max unit f frequency 2300 2500 mhz gp gain 36.0 db evm evm 2.5 % vdet power detector voltage 1.5 v att control gain step 25 db ict operating current vc1=vc2=vc3=vc4=5v, vref=2.85v, vcont=0v pout=28.5dbm 64qam ofdm modulation duty cycle <= 50% 950 ma *note : ta=25 ? c unless otherwise noted, zin=zout=50 ? ** att=gain(@vcont=0v) gain(@vcont=3.3v) moisture sensitivity level : level3
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (3/21) sep. -2010 performance data (wimax ofdm 64qam signal input) vc=5v, vref=2.85v, vcont=0v, duty cycle=50%, ta=25deg.c gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) 2.3ghz 2.4ghz 2.5ghz 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) 2.3ghz 2.4ghz 2.5ghz evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) 2.3ghz 2.4ghz 2.5ghz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) 2.3ghz 2.4ghz 2.5ghz acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp @10.5mhz (dbm) 2.3ghz 2.4ghz 2.5ghz -45 -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp @11.5mhz (dbm) 2.3ghz 2.4ghz 2.5ghz
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (4/21) sep. -2010 attenuation performance 0 5 10 15 20 25 30 35 40 2.0 2.2 2.4 2.6 2.8 3.0 freq.(ghz) gain(db) vcont=0v vcont=3.3v
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (5/21) sep. -2010 vc=5v, vref=2.85v, vcont=0v, duty cycle=50%, f=2.3ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (6/21) sep. -2010 vc=5v, vref=2.85v, vcont=0v, duty cycle=50%, f=2.4ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (7/21) sep. -2010 vc=5v, vref=2.85v, vcont=0v, duty cycle=50%, f=2.5ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (8/21) sep. -2010 performance data (wimax ofdm 64qam signal input) vc=5v, vref=2.8v , vcont=0v, duty cycle=50%, ta=25deg.c gain vs. output power operating current vs. output power 30 31 32 33 34 35 36 37 38 39 40 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) 2.3ghz 2.4ghz 2.5ghz 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) 2.3ghz 2.4ghz 2.5ghz evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) 2.3ghz 2.4ghz 2.5ghz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) 2.3ghz 2.4ghz 2.5ghz acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp @10.5mhz (dbm) 2.3ghz 2.4ghz 2.5ghz -45 -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp @11.5mhz (dbm) 2.3ghz 2.4ghz 2.5ghz
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (9/21) sep. -2010 vc=5v, vref=2.8v , vcont=0v, duty cycle=50%, f=2.3ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (10/21) sep. -2010 vc=5v, vref=2.8v , vcont=0v, duty cycle=50%, f=2.4ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (11/21) sep. -2010 vc=5v, vref=2.8v , vcont=0v, duty cycle=50%, f=2.5ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (12/21) sep. -2010 performance data (wimax ofdm 64qam signal input) vc=5v, vref=2.9v , vcont=0v, duty cycle=50%, ta=25deg.c gain vs. output power operating current vs. output power 30 31 32 33 34 35 36 37 38 39 40 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) 2.3ghz 2.4ghz 2.5ghz 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) 2.3ghz 2.4ghz 2.5ghz evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) 2.3ghz 2.4ghz 2.5ghz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) 2.3ghz 2.4ghz 2.5ghz acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp @10.5mhz (dbm) 2.3ghz 2.4ghz 2.5ghz -45 -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp @11.5mhz (dbm) 2.3ghz 2.4ghz 2.5ghz
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (13/21) sep. -2010 vc=5v, vref=2.9v , vcont=0v, duty cycle=50%, f=2.3ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (14/21) sep. -2010 vc=5v, vref=2.9v , vcont=0v, duty cycle=50%, f=2.4ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (15/21) sep. -2010 vc=5v, vref=2.9v , vcont=0v, duty cycle=50%, f=2.5ghz gain vs. output power operating current vs. output power 24 26 28 30 32 34 36 38 40 42 44 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) gain (db) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0 200 400 600 800 1000 1200 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) ict (ma) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c evm vs. output power detector voltage vs. output power 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) evm (%) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) vdet (v) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c acp characteristics -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@10.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c -40 -35 -30 -25 -20 -15 20 21 22 23 24 25 26 27 28 29 30 31 32 output power(dbm) acp@11.5mhz (dbm) -40deg.c -30deg.c 0deg.c 25deg.c 60deg.c 85deg.c
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (16/21) sep. -2010 example layout of evaluation board (40mm x 40mm, t=0.2mm(rf), er=4.2, fr-4) vc(5v) vcont(0/3.3v) vref(2.85v) vdet rf in rf out vc1 vcb q1 c1 c2 c3 r1 c4 c5 c6 c7 c8 c9 c10 c11 vc(5v) vcont(0/3.3v) vref(2.85v) vdet rf in rf out vc1 vcb q1 c1 c2 c3 r1 c4 c5 c6 c7 c8 c9 c10 c11 item description note q1 mgfs38e2325 4mmx4mm c1, c2, c3 1nf, 1005 murata, grm155b11h102k c4, c5, c6, c7 22 nf, 1005 murata, grm155b11c223k c8, c9, c10, c11 47 uf, 3225 murata, grm31cb30j476k r1 160k, 1005 taiyosha, rpc03t164j
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (17/21) sep. -2010 application circuit example supply voltage rf input vc4 50ohms vc1,vcb vc2 vc3 pin 1000pf pout 50ohms vcont vref gnd vdet 1000pf 1000pf detector voltage out rf output reference voltage attenuator control 160k ohms 22nf c1 c2 c3 r1 47uf c8 c9 c10 c11 c4 c5 c6 c7 c1,c2,c3 :1000pf c4,c5,c6,c7:22nf c8,c9,c10,c11:47uf put c1, c2, c4, c5, and c6 as close as possible to the device. put c3 as close as possible to r1. trl1: z=54 ohms e=8.3deg. f=2.5ghz trl2: z=65 ohms e=16.6deg. f=2.5ghz trl1 trl2 note: a properly designed pc board is essential to any rf/microwave circuit. be sure to use controlled impedance lines on all high-frequency inputs and outputs. a ground plane should be present on both the top and bottom of the pc board and plated-through via holes connecting the top and bottom ground planes should be dist ributed. gnd pins and ground paddle of the package should be connected to the botto m ground plane with plated-through via holes close to the package. to improve the heat resistance, place as many plated-through via holes as possi ble under the ground paddle (see page. 6). each vc node on the board should have its ow n decoupling capacitor to minimize s upply coupling from one section of the mmic to another. a bypass capacitor with low esr at the rf fr equency of operation is located cl ose to the package to reject the rf noise.
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (18/21) sep. -2010 package outline 0.4 3.4 3.8 1.0 4.0 4.0 3.4 1.7 0.4 2.55 0.3 0.3 3.65 top view side view bottom view package pin assign x-ray top view 1pin 2vc1, vcb 3vc2 4vc3 5vc4 6pout 7vdet 8gnd 9vref 10 vcont 1 2 3 4 5 10 9 8 7 6 gnd x-ray top view 1pin 2vc1, vcb 3vc2 4vc3 5vc4 6pout 7vdet 8gnd 9vref 10 vcont 1 2 3 4 5 10 9 8 7 6 gnd mitsubishi electric corp. reser ves the right to make changes to the produc t and its related material at any time without notice. pin function description 1 pin this is a rf input terminal. 2 vc1,vcb this is a collector vo ltage of the 1st stage and the supply voltage for base bias circuits.(5v) 3 vc2 this is a collector voltage of the 2nd stage. (5v) 4 vc3 this is a collector vo ltage of the 3rd stage. (5v) 5 vc4 this is a collector vo ltage of the 4th stage. (5v) 6 pout this is a rf output pin. 7 vdet this is an output port of the detector sampled at the output of the 3rd st age, and do not apply voltage. if you don?t use the detector function, this pin should be connected to nothing. 8 gnd this pin is internally grounded inside the package and it is recommended to ground it. 9 vref this is a reference volt age and power up/down control pin. dc dut y cycle is controlled with this pin.(2.85v/0v) 10 vcont this is a control vo ltage for attenuator. (0v/3.3v)
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (19/21) sep. -2010 example metal land pattern note: unit : mm through holes with 200um diameter should be put with a distance of 500um among them. it is recommended that they have metallization of 25um thick on the inside wall.
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (20/21) sep. -2010 recommended pulse condition duty cycle <50% input signal off some delay time vref vc 0v 5v time 2.85v duty cycle <50% input signal off some delay time vref vc 0v 5v time 2.85v ? this figure shows the timing c hart between vref and input signal. ? only while the reference voltage is 2.85v, the device transmits the input signal (*1). ? because the device needs appropriate set- up time before signal amplification, pl ease note that there is some delay time (e.g. about the rise time of vref) between t he rise edge of vref and t hat of the input signal. ? we recommend the device operate with less than 50% duty cy cle of a 5msec period in order to ensure specified reliability. *1: in case the device is operated under the vref conditions of more than 50% duty cycle, self-heating will cause reliability problem, thereby degrading both pow er gain and evm performance unexpectedly. test set-up vector signal generator coupler power meter oscilloscope vector signal analyzer attenuator attenuator attenuator power meter coupler dc power supply pulse power supply oscilloscope vref dut vcc vdet vector signal generator coupler power meter oscilloscope vector signal analyzer attenuator attenuator attenuator power meter coupler dc power supply pulse power supply oscilloscope dut vcont ? calibrate power meters at input/output ports on the evb. ? apply dc voltage to vc (vcb, vc1~vc4) and vcont, where pulsed power supply should be applied to vref for pulsed operation. . ? monitor dc output voltage from vdet us ing an oscilloscope or a multimeter. gnd->vc->vref->vcont (1)apply 5v to vc, where stepping up from 0 to 5v is preferable. (2)supply pulsed voltage between 0 and 2.85v for vref. please check the voltage level of vref close to evb and the timing chart between vref and input signal using an oscillosc ope. also please do not apply supply voltage exceeding 3v(absolute maximum rating) to the vref terminal. (3)supply vcont with 3.3v for the attenuation mode. in the thru-mode, apply 0v to vcont or keep it open. vcont->vref->vc->gnd the reverse procedure is recommended for bias off.
mitsubishi semiconductors MGFS38E2325-01 specifications are subjec t to change without notice. 2.3 - 2.5ghz hbt mmic module mitsubishi electric corporation rev. 1.1 (21/21) sep. -2010 handling precaution 1) work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. please note that electric discharge of gaas (ingap) hbt is much more sensitive than that of si transistor. handli ng without ground possibly damages gaas hbt. 2) the surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product. 3) ir reflow soldering condition is confirmed following profile (max. two times). the pa surface temperatures are shown in the profile. 4) handling precauti on at high temperature in case of heating this product, please keep the same heat profile as recommended reflow one. please note that crack, flaw or modifica tion may be generated if softened epoxy resin part is handled with tweezers and etc at high temperature. 5) cleaning condition please select after confirming administrative gui dance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. 6) after soldering, please remove the flux. please ta ke care that solvent does not penetrate into this product. 7) gaas hbt contains as (arsenic). this pr oduct should be dumped as particular industrial waste. 240deg.c 217deg.c peak 245deg.c ? 3deg.c/sec. ? 6deg.c/sec. sec 30 ? sec 150 60 c . deg 200 150 20sec 1 60


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